Plextek RFI has experience of designing GaN MMICs using the 0.25µm GaN on SiC processes of Wolfspeed (Cree), Qorvo (TriQuint), WIN Semiconductors and UMS. Our design activity has included compact X-band PAs for phased array radar, very high linearity (high power handling) microwave switching functions, robust GaN LNAs, broadband GaN PA MMICs for ESM applications, and high linearity GaN PAs for point to point link applications.
A lot of the GaN MMIC design work that we’ve previously undertaken, and are currently undertaking, for our clients is not available for publication. However we have designed a range of GaN MMIC functional blocks for which we own the IP, details of some of these can be found below. This library of GaN MMIC IP can be used to help develop customs GaN ICs for our clients with reduced risk and timescales.
The image to the top right shows a 15GHz GaN PA for point to point links. This uses Cree’s 0.25µm GaN on SiC process and offers an output power of 38dBm with an output IP3 of > 46dBm in a small die size . A technical tutorial video describing the design of this PA can be found in the Plextek RFI video library. The lower image is a photograph of an X-band GaN PA MMIC for phased array radar applications that covers 9 to 11.5GHz. It has an output power of 7W (38.5dBm) from a 29dBm drive with a Power Added Efficiency (PAE) of 42% and a die size is just 1.5mm x 2mm (allowing around 2,300 PAs to be fabricated on a single 4” diameter wafer). The design was realised on the 0.25µm gate length GaN on SiC process of UMS (GH25). A technical tutorial video describing the design of this X-band GaN PA MMIC is also available in the Plextek RFI video library.
Technical publications describing some of the GaN MMIC IP developed by Plextek RFI are available using the links below:
Plextek RFI is an approved 3rd party design house for the following GaN foundries:
If you would like to discuss how Plextek RFI could develop GaN MMICs for you then please email: enquiries@plextekRFI.com